Charge migration, which can occur even if the flash is not accessed, causes programmed cells to be appear to be erased. Frequent reads in an erase block increase the likelihood that unprogrammed cells can become programmed. The read disturb effect occurs because reading a page causes a weak programming voltage to be applied to all of the pages in the erase block, beyond just the one being read. NAND flash memory can exhibit gradual loss of stored data due to the “read disturb effect” or to charge migration over time. Being able to address these proactively through a software update means reduced RMAs and happier end users.” “Despite rigorous testing of their products prior to deployment, too many of them were experiencing shortened product lifetimes due to uncorrectable errors in the portions of their storage array without active management. “Our customers build products that are expected to last for years, sometimes decades,” said Kerri McConnell, VP of Sales and Marketing for Datalight. When coupled with the increasing susceptibility to read disturb errors due to shrinking lithography these storage demands have created a situation that must be mitigated if devices are to achieve their expected lifetimes. As systems have become more complicated with larger applications that use demand-paging, there is an increasing read rate. Today, read disturb and charge migration have increased in frequency such that read-only portions of the flash now need more careful attention. Datalight Inc., leading developer of flash file systems known for simplifying support for complex flash memory technologies, today announced the latest version of its market-leading FlashFX Tera flash driver software with support for enhanced power fail-safe handling of read disturb errors and charge migration on NAND flash memory.

Vxworks nand file system